熱加工與注入模組

CF-3000 Implanter 離子注入機(IMP-3000)
潔凈/半潔凈
CF-3000 Implanter (IMP-3000)
Specifications
Dose Energy : 10 to 180 keV
Max. Dose (ion/cm2 ) : 1016
Processing : Arsenic, Phosphorus, Boron, BF2 & Hydrogen implant
     
     
     
LPCVD (CVD-A2至CVD-A4;CVD-B1至CVD-B4)
潔凈/半潔凈
CVD-F2: 氮化鎵
LPCVD (CVD-A2至CVD-A4;CVD-B1至CVD-B4;CVD-F2至CVD-F4)
Specifications
Each deposition has its programmed flow of gases compositions, temperature and pressure
ASM LB45  LPCVD Furnace:
Polysilicon, Amorphous silicon, N-doped Amorphous Silicon, Silicon Germanium, Silicon Nitride,
Low Temperature Oxide (LTO), Phosphorous Silicon Glass (PSG)
Flokal LPCVD Furnace:
Polysilicon, Amorphous silicon, Silicon Nitride,
Low Stress Silicon Nitride, LTO, PSG
 
Diff. Furnace(DIF-A1, DIF-C1至DIF-C4;DIF-D1至DIF-D3, DIF-F1)
潔凈/半潔凈/非常規
DIF-D4:氮化鎵
Diff. Furnace(DIF-A1, DIF-C1至DIF-C4;DIF-D1至DIF-D4, DIF-F1
Specifications
Operating temperature : 400 to 1150 oC
Processing : Dry & Wet Oxidation with TCE, N/P diffusion, Forming Gas annealing and Drive in
 
ET-3000 Epitaxy 硅外延爐(CVD-EPI
潔凈
ET-3000 Epitaxy (CVD-EPI)
Specifications
Epitaxial layers of Silicon, Silicon Germanium,
N-doped(PH3), P-doped (B2H6)
Fit for up to a 4" wafer
 
STS PECVD (CVD-P2)
非常規
STS PECVD (CVD-P2)
Specifications
Processing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon
 
310PC PECVD (CVD-P1)
半潔凈
310PC PECVD (CVD-P1)
Specifications
Processing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon
 
TEOS PECVD (CVD-TEOS
半潔凈
TEOS PECVD (CVD-TEOS)
Specifications
Processing : TEOS Silicon Dioxide
 
Oxford ALD (CVD-ALD)
非常規
Oxford ALD (CVD-ALD)
Specifications
Thermal and plasma ALD
Processing : Aluminum Oxide (Al2O3)
Zirconium Oxide (ZrO2)
 
CNT PECVD (CVD-CNT)
非常規
CNT PECVD (CVD-CNT)
Specifications
Frequency : 2455 MHz
Processing : CNT growth
Temperature : 900 oC
 
RTP-600S (DIF-R1)
潔凈
RTP-600S (DIF-R1)
Specifications
Steady-state temperature stability : ±2℃ in the range of 250-1150℃
Heating rate : 0-200℃/sec
Cooling rate : 150℃ max/sec
Steady state time : 1-600 sec
 
AG610 RTP (DIF-R2)
半潔凈
AG610 RTP (DIF-R2)
Specifications
Operating temperature in the range of 400℃ to 1000℃
Ion implantation annealing
Silicide formation
Nitridation of thin gate, dielectrics & silicide
PSG/BPSG reflow
 
AW610 RTP (DIF-R3)
非常規
AW610 RTP (DIF-R3)
Specifications
Wafer handling : Manual loading of wafer into the oven, single wafer processing
Wafer sizes : Small samples and 2", 4" and 6" wafers
Ramp up rate : Programmable, 10℃ to 80℃ per second
Ramp down rate : Programmable, 10℃ to 80℃ per second
Operating temperature in the range of 250℃ to 800℃
Ion implantation annealing
Silicide formation, nitridation of thin gate, dielectrics & silicide, PSG/BPSG reflow