光刻模組

Nanoscribe 3D 打印機 (PHT-P1)
潔凈/半潔凈/非常規
Nanoscribe 3D Printer (PHT-P1)
Specifications
Resolution (depends on the objective lens and resist)  : - 3D lateral feature size: ≤200 nm
- 2D lateral resolution: ≤500 nm
- Vertical resolution: ≤1,500 nm
Speed : - Beam scanning speed: 10 mm/s
- Piezo scanning speed: 100 µm/s
Range : - Motorized xy scanning stage range:
100 x 100 mm²
-x-y-z piezo range: 300 x 300 x 300 µm³
-x-y galvo scan range 200 - 1000 µm Ø dependent on scanning objective
Maximum structure height : - IP-Q 10x lens DiLL: 8 mm
- IP-S 25x lens DiLL: 3 mm
- IP DiP 63x lens DiLL: 3 mm
- Oil immersion with 170 µm glass: 150 µm
Minimum feature size : -10x lens: ~2 µm x, y and ~10 µm z
-25x lens: 0.6 µm x, y and ~3.3 µm z
-63x lens: 150 nm x, y and 800 nm z
Objectives : 1. Immersion Objective: 63x, NA=1.4; WD=190 um, for high-resolution structures, printing field (Galvo Ø) = 200 um; Typical slicing distance = 0.3 µm; Typical hatching distance=0.2 µm

2. Immersion Objective: 25x; NA=0.8; WD=380 um, for mesoscale structures; Printing field (Gavle Ø) = 400 µm; Typical slicing distance =1 µm; Typical hatching distance=0.5 µm

3. Air Objective: 20x, NA=0.5; WD=2100 um, for 2D maskless lithography; Printing field (Galvo Ø) = 600 µm; Typical slicing distance=3-6 µm; Typical hatching distance= 0.7-1.2 µm

4. Immersion Objective: 10x, NA=0.3; WD=700 um, for rapid prototyping; Printing field (Galvo Ø) =1000 µm; Typical slicing distance= 5 µm; Typical hatching distance =1 µm
Sample holders :
Model Substrate Type Substrate Dimension Substrate Thickness
DiLL DiLL substrate 25 mm x 25 mm 0.7 mm
Microscope slide 24-26 mm x 50-76mm 1.0 mm
Borosilicate Ø 30 mm 0.17 mm
Cover slip Ø 25.4 mm 0.3 mm
Multi-DiLL DiLL substrate 25 mm x 25 mm 0.5 mm
2" wafer wafer Ø 2" 0.35-0.55 mm
4" wafer wafer Ø 4" 0.35-0.55 mm
10 x Ø 30 mm Cover slips Ø 30 mm 0.17 mm
Printing configuration :
Configuration Objective Immersion medium Substrate(s) Resist
Oil immersion 63x NA 1.4 oil glass 170 um IP-L 780
Air 20x NA 0.5 air silicon, glass AZ resist, SU8
Dip-in Laser Lithography (DiLL) 10x NA 0.3   silicon IP-Q
25x NA 1.4 ITO coated glass , silicon IP-S
63x NA 1.4 fused silica IP-DIP
ASML Stepper 步進光刻機 （PHT-S1）
潔凈/半潔凈
ASML Stepper (PHT-S1)
Specifications
Light source illumination  : i-line (365 nm)
Resolution : 0.5 µm
Overlay alignment accuracy : ± 0.1 µm (3 sigma)
Wafer size : 4" or 6"
Field size : 15 mm x 15 mm or
10 mm x 10 mm (on wafer)
Reduction ratio : 5:1
Photomask size : 5" square
Karl Suss Bonder XB8 晶片鍵合機 (PHT-B2)
非常規
Karl Suss Bonder XB8 (PHT-B2)
Specifications
Adhesive, Anodic, Eutectic bonding and Silicon fusion prebonding
Wafer size : > 2 cm x 2 cm, 4", 6" & 8"
Substrate material : Silicon or Pyrex Glass
Pressure : 1x10e-5 mbar to 3 bars
Bonding force : 3500 N ~ 100K N (8")
Temperature : RT to 500 ºC
Controllable Voltage range : 0 – 2000 V
Controllable Current range : 0-15 mA
 
SET ACCµRA100 倒裝貼片機 (PHT-B3)
非常規
SET ACCµRA100 Flip-Chip Bonder (PHT-B3)
Specifications
Flip-chip/Die bonding
Substrate size : 1 mm x 1 mm to 100 mm x 100 mm
Chip size : 1 mm x 1 mm to 50 mm x 50 mm
Post-bonding accuracy : +/- 0.5 µm
Bonding force : 1 N to 1000 N
Temperature : RT to 400 ºC
 
Karl Suss MA6 #1 and #2 光刻機（PHT-A5及PHT-A7）
潔凈/半潔凈/非常規
Karl Suss MA6 #1 and #2 (PHT-A5 and PHT-A7)
Specifications
Light source illumination  : i-line (365 nm)
Resolution : 1 um
Substrate size : > 5 mm2 to 2" or 4”
Photomask size : 5” square
Exposure modes : Contact (soft, hard, low vacuum and Vacuum)    
Proximity (exposure gap 1-300um);
Flood Exposures
Alignment methods : Top Side Alignment (TSA);
Bottom Side Alignment (BSA)
Alignment accuracy : TSA (down to 0.5 µm);
BSA (down to 1 µm)
No. of machines installed : 2
AB-M Aligner #1 (UV)/(DUV) and #2 (UV) 接觸式光刻機（PHT-A1及PHT-A2）
半潔凈/非常規
AB-M Aligner #1 (UV)/(DUV) and #2 (UV) (PHT-A1 and PHT-A2)
Specifications
Light source illumination : DUV / UV wavelength selectable
(500W Mercury DUV lamp)
Alighment printing mode : Manual
Soft contact : Contact vacuum adjustable
Hard contact : Full vacuum contact
Photomask : 5" square or 7" square
Substrate size : > 5 mm2 to 4" square, or 6"
Special feature : Backside alignment using Infra-red
No. of machines installed   2
SVG88 Coater Track and SVG88 Developer Track 塗膠機（PHT-T1及PHT-T2）
潔凈/半潔凈
SVG88 Coater Track and SVG88 Developer Track (PHT-T1 and PHT-T2)
Specifications
Automatic tracks for resist coating and developing
No. of tracks : 2
Coat track feature : Vapor prime
chill plate
: Coat module
Backside rinse
: Frontside edge bead remover
2 hot plate ovens
Develop track : Developer module, chill plate, 2 hot plate ovens
Coating uniformity : ± 0.3 %
Wafer size : 4" and 6"
Wafer loading/unloading : Cassette to cassette
EVG Spray Coater 噴霧式塗膠機（PHT-SC5）
潔凈/半潔凈/非常規
EVG Spray Coater (PHT-SC5)
Specifications
Speed range  : up to 10000 rpm
Ramp up speed : 0-40000 rpm/s
Heat chuck temperature : up to 70 ± 1 oC
Spray speed integrate with heat chuck : < 1500 rpm
Spray coating nozzle : Ultrasonic Atomizer Nozzle
Syringe dispense rate : 0.01 ml/s to 5 ml/s
Substrate size : Up to 200 mm or 150 mm x 150 mm
 
SUSS Coater 手動塗膠機（PHT-SC1）
半潔凈/非常規
SUSS Coater (PHT-SC1)
Specifications
Spin speed range : 0 to 7000 rpm
Spin speed acceleration : 0-5000 rpm/s
Coat system : Open Bowl; GYRSET
Substrate size : > 5 mm2 to 6" or 5" square for single side coating
4" for double side coating
Other : Programmable bowl auto-clean; Edge bead remover
 
CEE Coater 手動塗膠機及加熱台（PHT-SC3）
潔凈/半潔凈
CEE Coater (PHT-SC3)
Specifications
Spin speed range : 0- 6000 rpm
Spin speed acceleration : 0-30000 rpm/s
Substrate size : 4" or 6"
Other : Frontside edge bead remove
 
Desktop Coater 桌上式手動塗膠機（PHT-SC2）
非常規
Desktop Coater (PHT-SC2)
Specifications
Spin speed range  : 0 to 5000 rpm
Substrate size : > 5 mm2 to 4" square
 
Solitec Coater #1 塗膠機（PHT-SC4）
非常規
Solitec Coater #1 (PHT-SC4)
Specifications
Spin speed range  : 250-5000 rpm
Spin speed acceleration : 1000-4000 rpm/sec
Substrate size : Larger than 5mm, 2 to 4", 5" square for single side coating or 4" for double side coating
 
High Temperature Conventional Oven 高溫烘箱（PHT-O1至PHT-O4；PHT-O6 至PHT-O9）
潔凈/半潔凈/非常規
High Temperature Conventional Oven (PHT-O1 to PHT-O4, PHT-O6 to PHT-O9)
Specifications
High temperature oven : Up to 450 oC
Convention oven temperature : Up to 250 oC
Substrate size : Up to 6"
 
Vacuum Oven 真空烘箱（PHT-O5）
非常規
Vacuum Oven (PHT-O5)
Specifications
Temperature : Up to 300 oC
Substrate size : 1 cm2 to 4"
Vacuum : 0 to 30 in.Hg
Other : N2 purge
 
Unitemp Reflow Oven 回流焊爐(PHT-O11) (只供PHT-B3 倒裝貼片機用戶使用)
Non-Standard
Unitemp Reflow Oven (PHT-O11)
Specifications
Reflow Soldering (with Formic Acid Option)
Substrate size : Fragments to 160 mm
Substrate Thickness : Up to 10 mm
Vacuum Range : Atmosphere to 10-3 hPa or mbar
Oven Temperature : Ambient to 350oC
Ramp Up Rate : Up to 120 K/min
Gas Flow Control : Nitrogen at max. 5 normal litre per min
 
Nikon IC Inspection Microscope with Digital Camera 數字顯微鏡（PHT-MIC1）
 
Nikon IC Inspection Microscope with Digital Camera (PHT-MIC1)
Specifications
Contrast methods  : BF /DF/ DIC/ Fluorescence
Magnification : 50X - 1500X
Wafer holder : up to 6"
Mask holder : 5" square
Digital camera : 5M pixel CCD
Display : 8.4" TFT LCD XGA
Software : Dimension measurement tool
 
Hot Plates 加熱台（PHT-HP1至PHT-HP8）
潔凈/半潔凈/非常規
Hot Plates (PHT-HP1 to PHT-HP8)
Specifications
Computer temperature controller with digital readout
Substrate size : Up to 6"
Temperature : 50 to 250 oC
Temperature uniformity :  ± 1 oC
 
Laurell PDMS Coater 塗膠機 (PHT-SC6) (只供做微流體工藝的用戶使用)
非常規
Laurell PDMS Coater (PHT-SC6)
Specifications
Spin Speed range : 0- 6000 rpm
Spin speed acceleration : 0-30000 rpm/s
Substrate size : 2" or 4"
 
Kurabo PDMS Mixer/Deaerator 攪拌/脫泡機 (PHT-MX1) (只供做微流體工藝的用戶使用)
非常規
Kurabo PDMS Mixer/Deaerator (PHT-MX1)
Specifications
Max. processing quantity : 310 g x 1 container
Revolution : 200 - 2000 rpm (Mixing mode)
400 -2200 rpm (Deaerate mode)
Rotation : Max 800 rpm (Mixing mode)
Max 66 rpm (Deaerate mode)
Setting time : 0 – 30 mins x 9 steps