光刻模組
Nanoscribe 3D 打印機 (PHT-P1)
潔凈/半潔凈/非常規
Specifications
Resolution (depends on the objective lens and resist) | : |
- 3D lateral feature size: ≤200 nm - 2D lateral resolution: ≤500 nm - Vertical resolution: ≤1,500 nm |
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Speed | : |
- Beam scanning speed: 10 mm/s - Piezo scanning speed: 100 µm/s |
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Range | : | - Motorized xy scanning stage range: 100 x 100 mm² -x-y-z piezo range: 300 x 300 x 300 µm³ -x-y galvo scan range 200 - 1000 µm Ø dependent on scanning objective |
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Maximum structure height | : | - IP-Q 10x lens DiLL: 8 mm - IP-S 25x lens DiLL: 3 mm - IP DiP 63x lens DiLL: 3 mm - Oil immersion with 170 µm glass: 150 µm |
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Minimum feature size | : | -10x lens: ~2 µm x, y and ~10 µm z -25x lens: 0.6 µm x, y and ~3.3 µm z -63x lens: 150 nm x, y and 800 nm z |
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Objectives | : | 1. Immersion Objective: 63x, NA=1.4; WD=190 um, for high-resolution structures, printing field (Galvo Ø) = 200 um; Typical slicing distance = 0.3 µm; Typical hatching distance=0.2 µm 2. Immersion Objective: 25x; NA=0.8; WD=380 um, for mesoscale structures; Printing field (Gavle Ø) = 400 µm; Typical slicing distance =1 µm; Typical hatching distance=0.5 µm 3. Air Objective: 20x, NA=0.5; WD=2100 um, for 2D maskless lithography; Printing field (Galvo Ø) = 600 µm; Typical slicing distance=3-6 µm; Typical hatching distance= 0.7-1.2 µm 4. Immersion Objective: 10x, NA=0.3; WD=700 um, for rapid prototyping; Printing field (Galvo Ø) =1000 µm; Typical slicing distance= 5 µm; Typical hatching distance =1 µm |
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Sample holders | : |
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Printing configuration | : |
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ASML Stepper 步進光刻機 (PHT-S1)
潔凈/半潔凈
Karl Suss Bonder SB6 晶片鍵合機(PHT-B1)
非常規
Karl Suss MA6 #1 and #2 光刻機(PHT-A5及PHT-A7)
潔凈/半潔凈/非常規
Specifications
Light source illumination | : | i-line (365 nm) |
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Resolution | : | 1 um |
Substrate size | : | > 5 mm2 to 2" or 4” |
Photomask size | : | 5” square |
Exposure modes | : | Contact (soft, hard, low vacuum and Vacuum) Proximity (exposure gap 1-300um); Flood Exposures |
Alignment methods | : | Top Side Alignment (TSA); Bottom Side Alignment (BSA) |
Alignment accuracy | : | TSA (down to 0.5 µm); BSA (down to 1 µm) |
No. of machines installed | : | 2 |
AB-M Aligner #1 (UV)/(DUV) and #2 (UV) 接觸式光刻機(PHT-A1及PHT-A2)
半潔凈/非常規
Specifications
Light source illumination | : | DUV / UV wavelength selectable (500W Mercury DUV lamp) |
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Alighment printing mode | : | Manual |
Soft contact | : | Contact vacuum adjustable |
Hard contact | : | Full vacuum contact |
Photomask | : | 5" square or 7" square |
Substrate size | : | > 5 mm2 to 4" square, or 6" |
Special feature | : | Backside alignment using Infra-red |
No. of machines installed | 2 |
SVG88 Coater Track and SVG88 Developer Track 塗膠機(PHT-T1及PHT-T2)
潔凈/半潔凈
Specifications
Automatic tracks for resist coating and developing | ||
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No. of tracks | : | 2 |
Coat track feature | : | Vapor prime chill plate |
: | Coat module Backside rinse |
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: | Frontside edge bead remover 2 hot plate ovens |
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Develop track | : | Developer module, chill plate, 2 hot plate ovens |
Coating uniformity | : | ± 0.3 % |
Wafer size | : | 4" and 6" |
Wafer loading/unloading | : | Cassette to cassette |
EVG Spray Coater 噴霧式塗膠機(PHT-SC5)
潔凈/半潔凈/非常規
Specifications
Speed range | : | up to 10000 rpm |
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Ramp up speed | : | 0-40000 rpm/s |
Heat chuck temperature | : | up to 70 ± 1 oC |
Spray speed integrate with heat chuck | : | < 1500 rpm |
Spray coating nozzle | : | Ultrasonic Atomizer Nozzle |
Syringe dispense rate | : | 0.01 ml/s to 5 ml/s |
Substrate size | : | Up to 200 mm or 150 mm x 150 mm |
SUSS Coater 手動塗膠機(PHT-SC1)
半潔凈/非常規
CEE Coater 手動塗膠機及加熱台(PHT-SC3)
潔凈/半潔凈
Desktop Coater 桌上式手動塗膠機(PHT-SC2)
非常規
Solitec Coater #1 塗膠機(PHT-SC4)
非常規
High Temperature Conventional Oven 高溫烘箱(PHT-O1至PHT-O4;PHT-O6 至PHT-O9)
潔凈/半潔凈/非常規
Vacuum Oven 真空烘箱(PHT-O5)
非常規
Nikon IC Inspection Microscope with Digital Camera 數字顯微鏡(PHT-MIC1)
Hot Plates 加熱台(PHT-HP1至PHT-HP8)
潔凈/半潔凈/非常規
Laurell PDMS Coater 塗膠機 (PHT-SC6) (只供做微流體工藝的用戶使用)
非常規
Kurabo PDMS Mixer/Deaerator 攪拌/脫泡機 (PHT-MX1) (只供做微流體工藝的用戶使用)
非常規