測試模組

Tencor Sono Gauge 300
Tencor Sono Gauge 300 (MEA-300)
Specifications
For single point measurement of wafer thickness, Aluminum film thickness and sheet resistance of metal
Wafer Diameter : 3”, 4”, 5” and 6”
Substrate Thickness : 250-700 µm
Sheet Resistance : 1 to 1999 Ω/sq.
Minimum Metal Film Thickness : 100 Ȧ
     
Tencor P-10表面台階儀
Tencor P-10 Surface Profiler (MEA-P10)
Specifications
Measurement of roughness, waviness, step height on a surface
Vertical Resolution : 1 Å (Max. vertical range 13μm),
25 Å (Max vertical range 300μm)
Horizontal Resolution : 0.01 μm at 1μm/s scan speed
Max. Scan Length : 60 mm, 2-D scan only
Scan Speed : 1 μm/s to 25 mm/s
Stylus Force : 1-100 mg
Stylus Radius : 12.5 μm
Display Magnification : 60-240x
KLA-Tencor P-7表面台階儀
KLA-Tencor P-7 Surface Profiler
Specifications
Measurement of roughness, waviness, step height on a surface
Vertical Resolution : 1 Å (Max. vertical range 13μm),
25 Å (Max vertical range 300μm)
Horizontal Resolution : 0.025 μm
Max. Scan Length : 150 mm, 2-D scan only
Scan Speed : 2 μm/s to 25 mm/s
Stylus Force : 0.5-50 mg
Stylus Radius : 2 μm
Display Magnification : 60-240x
Dektak 150 Veeco表面台階儀
Dektak 150 Veeco Surface Profiler (MEA-DTK150)
Specifications
Measurement of roughness, waviness, step height on a surface
Stylus Force : 1 to 15mg with LIS 3 sensor
Stylus Radius : 2.5 μm and 12.5 μm
Scan Length Range : 55mm
Sample Stage : Manual Θ, 360° rotation,
manual leveling, auto X-Y 150 mm travel,
1 μm repeatability, 0.5 μm resolution
Data Points Per Scan : 60,000 maximum
Max. Sample Thickness : Up to 100 mm
Max. Wafer Size : 150 mm
Step Height Repeatability : 6A, 1 sigma on 1μm step
Vertical Range : 524 μm standard
Vertical Resolution : 1A max. (at 6.55 μm range)
Four Dimension 280C四點探針台
Four Dimension 280C Four-Point-Probe Mapping System (MEA-280C)
Specifications
Range from 0.001 to 800k Ohm per square
Single point, 5 points or external PC mapping measurement
3" to 6" wafer capability
Various probe heads selection
     
Lucas Pro4-640R電阻率測量系統
Lucas Pro4-640R Resistivity Measurement System (MEA-PRO-640R)
Specifications
Range from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley 2400 source meter
Tungsten Carbide and Osmium probe heads
Tip radius : 0.0016 inches
Spring Pressure : 85 grams
NANOmetrics Nanospec AFT Model 4150 / 3000
NANOmetrics Nanospec AFT Model 4150 / 3000
Specifications
Single film thickness measurement on silicon substrate:
Silicon dioxide, Silicon nitride, positive/negative photo resist and polymide
Double layers measurement on silicon substrate :
Silicon nitride on silicon dioxide, Polysilicon on silicon dioxide, Amorphous silicon on silicon dioxide, Negative/positive resist on silicon oxide
Standard visible system with Lens in 10x magnification
Measuring light spot size : 15 μm (Model 4150)
25 μm (Model 3000)
Automatic focusing and preset pattern of measurement point locations (Model 4150)
J.A. Woollam M-2000VI 光譜型橢偏儀
J.A. Woollam M-2000V Multi-Wavelength Ellipsometer (MEA-2000V)
Specifications
Measure the optical constants: refractive Index, extinction coefficients and film Thickness for different materials
Wavelength : 370 nm to 1690 nm, ~ 580 wavelengths
All wavelengths are acquired simultaneously
Focused beam diameter in ~200 μm (collimated)
Spectral resolution in 1.6 nm, 5 nm bandwidth
Test Base fixed angle of 66°, horizontal sample stage for 100 mm wafer
Automated z-height alignment
XE150S原子力顯微鏡
Atomic Force Microscope XE150S (MEA-XE150S)
Specifications
Non-contact AFM imaging to investigate and analyze a sample surface
Supports up to 6" wafer
100 µm × 100 µm XY scan range
Up to 12 µm Z scan range
Radius of probe tip size, 10 nm
Enhanced acoustic enclosure
Fully motorized XY stage travels entire 150 mm × 150 mm
SMSi 3800膜應力測量系統
Film Stress Measurement System SMSi 3800 (MEA-3800)
Specifications
Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
Measure 1-D stress and produce 3-D topographical profile
For wafer flatness and Pattern measurement
Various of stress constant
Wafer size : 2" to 8"
Thickness Limit : less than 11 mm
Statistical process control and spreadsheet compatibility
Automatic segmentation calculation
形狀測量激光顯微系統
Keyence 3D laser confocal Microscope
Specifications
Keyence VK-X260K 3D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any material.
Light source : 408nm violet laser source
White light source
Total magnification : Up to 28000x
Optical microscope : Pinhole confocal optical system
4 Objectives (10X, 20X, 50X & 150X)
Light receiving element : 16-bit photomultiplier
Scanning method : Automatic upper/lower limit setting
High-speed light intensity optimization (AAGII)
Poor reflected light intensity supplement (Double Scan)
Stage : Manual XY Stage
70mm×70mm
Micrometric motorized Z translation
Resolution : 1nm lateral resolution
0.5nm Z-axis movement of objective lenses
Observation image : Super-high-resolution color CCD image
16-bit laser color confocal image
Confocal + ND filter optical system
C-laser differential interference image
Sample size : Up to 5"
Maximum sample height 28mm
Perfict Lab Probe Station with Keysight B1500A Analyzer 探針台連分析儀
Perfict Lab Probe Station with Keysight B1500A Analyzer
Specifications
Probing Stage:
Sample size : Up to 152.4 mm (6 inch)
Probe:
Probe Tip Holder : Triaxle cable
Current leakage: <50 fA
Probe Tip diameter : 20 μm
Stereo Microscope:
Optical Magnification : 20X – 400X
Keysight B1500A Semiconductor Device Parameter Analyzer:
Current-Voltage (IV) measurement with 4 HRSMUs (High Resolution Source Monitor Units)
Current range : ± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
Voltage range : ± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV