Thermal Diffusion and Ion Implantation Module

CF-3000 Implanter (IMP-3000)
Clean/Semi-clean
CF-3000 Implanter (IMP-3000)
Specifications
Dose Energy : 10 to 180 keV
Max. Dose (ion/cm2 ) : 1016
Processing : Arsenic, Phosphorus, Boron, BF2 & Hydrogen implant
     
     
     
LPCVD (CVD-A2 to CVD-A4, CVD-B1 to CVD-B4, CVD-F2 to CVD-F4)
Clean, Semi-clean
CVD-F2: GaN only
LPCVD (CVD-A2 to CVD-A4, CVD-B1 to CVD-B4, CVD-F2 to CVD-F4)
Specifications
Each deposition has its programmed flow of gases compositions, temperature and pressure
ASM LB45  LPCVD Furnace:
Polysilicon, Amorphous silicon, N-doped Amorphous Silicon, Silicon Germanium, Silicon Nitride,
Low Temperature Oxide (LTO), Phosphorous Silicon Glass (PSG)
Flokal LPCVD Furnace:
Polysilicon, Amorphous silicon, Silicon Nitride,
Low Stress Silicon Nitride, LTO, PSG
 
Diff. Furnace (DIF-A1, DIF-C1 to DIF-C4, DIF-D1 to DIF-D4, DIF-F1)
Clean, Semi-clean, Non-Standard
DIF-D4: GaN only
Diff. Furnace (DIF-A1, DIF-C1 to DIF-C4, DIF-D1 to DIF-D4, DIF-F1)
Specifications
Operating temperature :  400 to 1150 oC
Processing :  Dry & Wet Oxidation with TCE, N/P diffusion, Forming Gas annealing and Drive in 
 
ET3000 Epitaxy (CVD-EPI)
Clean
ET3000 Epitaxy (CVD-EPI)
Specifications
Epitaxial layers of Silicon, Silicon Germanium,
N-doped(PH3), P-doped (B2H6)
Fit for up to a 4" wafer
 
STS PECVD (CVD-P2)
Non-Standard
STS PECVD (CVD-P2)
Specifications
Processing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon
 
310PC PECVD (CVD-P1)
Semi-clean
310PC PECVD (CVD-P1)
Specifications
Processing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon
 
TEOS PECVD (CVD-TEOS)
Semi-clean
TEOS PECVD (CVD-TEOS)
Specifications
Processing :  TEOS Silicon Dioxide
 
Oxford ALD (CVD-ALD)
Non-Standard
Oxford ALD (CVD-ALD)
Specifications
Thermal and plasma ALD
Processing : Aluminum Oxide (Al2O3)
Zirconium Oxide (ZrO2)
 
CNT PECVD (CVD-CNT)
Non-Standard
CNT PECVD (CVD-CNT)
Specifications
Frequency :  2455 MHz
Processing :  CNT growth
Temperature :  900 oC
 
RTP-600S (DIF-R1)
Clean
RTP-600S (DIF-R1)
Specifications
Steady-state temperature stability :  ±2℃ in the range of 250-1150℃
Heating rate :  0-200℃/sec
Cooling rate : 150℃ max/sec
Steady state time : 1-600 sec
 
AG610 RTP (DIF-R2)
Semi-clean
AG610 RTP (DIF-R2)
Specifications
Operating temperature in the range of 400℃ to 1000℃
Ion implantation annealing
Silicide formation
Nitridation of thin gate, dielectrics & silicide
PSG/BPSG reflow
 
AW610 RTP (DIF-R3)
Non-Standard
AW610 RTP (DIF-R3)
Specifications
Wafer handling :  Manual loading of wafer into the oven, single wafer processing
Wafer sizes :  Small samples and 2", 4" and 6" wafers
Ramp up rate : Programmable, 10℃ to 80℃ per second
Ramp down rate : Programmable, 10℃ to 80℃ per second
Operating temperature in the range of 250℃ to 800℃
Ion implantation annealing
Silicide formation, nitridation of thin gate, dielectrics & silicide, PSG/BPSG reflow