Mask Making Module

Heidelberg DWL 2000 Laser Lithography System
Heidelberg DWL 2000 Laser Lithography System
Specifications
1. Environment chamber, providing a stable environment for the system
- Laminar airflow (adjustable): 0.3 – 0.5 m/s
- Temperature stability: ± 0.1 °C
- Air quality: Class 10
2. Stage system with linear motors, air bearings and interferometric position control
- Maximum substrate size: 9" x 9"
- Maximum write area: 200 x 200 mm² (min. 5 mm from substrate edge)
- Substrate thickness: 0 to 7 mm
3. Writing performance
- Write mode: I and II
- Minimum feature size: 0.5um , 0.7um
- Edge roughness(3s): 40nm , 50nm
- CD uniformity(3s): 60nm , 80nm
- Alignment measurement accuracy(3s): 60nm, 70nm
- Overlay accuracy(3s): 160nm, 200nm
- Write speed (mm2/minute): 29, 110
JEOL JBX-6300FS E-Beam Lithography System
JEOL JBX-6300FS E-Beam Lithography System
Specifications
Writing Mode : High speed or high precision
Beam Current : 30pA to 20nA
Scanning Speed : 12M to 250 Hz
Accelerate Voltage : 20, 50 or 100 kV
Max. Field Size (um2) : High speed mode: 2000 (20kV), 1000 (50kV) or 500 (100kV);
High precision mode: 250 (20kV), 125 (50kV) or 62.5 (100kV)
Mask : 5” x 5” x 0.09”
Wafer : 4” or 2”
Nano-imprint Mask : 65mm x 65mm x 6.35mm
Chip Sample : 2cm x 2cm, 1.5cm x 1.5cm or
1cm x 1cm
Scanning Electron Microscope JEOL JSM-6490
Scanning Electron Microscope JEOL JSM-6490
Specifications
Resolution : HV mode 3 nm (30kV), 15 nm (1kV)
    LV mode 4 nm (30kV)
Magnification : x8 to x300000 (at 11kV or higher)
    x5 to x300000 (at 10kV or lower)
Specimen Stage : X :125mm, Y: 100mm, Z:5-80mm
    Tilt : -10 to +90 degree
Image mode : Secondary electron image
Accelerating Voltage : 0.3kV to 30kV
Filament : Factory pre-centered filament
Auto functions : Focus, brightness, contrast, stigmator
Motor control : 5 axes computer controlled
Frame store : 640 x 480, 1280 x 960 pixels
Image format : BMP, TIFF, JPEG